P-êàíàëüíûå MOS òðàíçèñòîðû International Rectifier

NEXFET Power MOSFETs (Ñèëîâûå ÌÎÏ - òðàíçèñòîðû)
4-Lead FlipFET

Ð-êàíàëüíûå
Òèï VBRDSS (V) RDS(on) Max 2.7V (mOhms) RDS(on) Max 4.5V (mOhms) ID @ TA = 25C (A) ID @ TA = 70C (A) Qg Typ (nC) Qgd Typ (nC) Rth(JC) (K/W) Power Dissipation @ TA = 25C (W)
IRF6100 -20 95.0 65.0 -4.1 -3.3 14.0 5.0 85 1.50

D-Pak(ÒÎ – 252ÀÀ)
Òèï VBRDSS (V) RDS(on) Max 4.5V (mOhms) RDS(on) Max 10V (mOhms) ID @ TC = 25C (A) ID @ TC = 100C (A) Qg Typ (nC) Qgd Typ (nC) Rth(JC) (K/W) Power Dissipation @ TC = 25C (W)
IRFR6215 -150 580.0 13 9 44.0 23.3 1.4 110
IRFR9120N -100 480.0 -6.5 -4.1 18.0 10.0 3.2 39
IRFR5410 -100 205.0 13 8.2 38.7 21.3 1.9 66
IRFR9024N -55 175.0 11 8 12.7 6.7 3.3 38
IRFR5505 -55 110.0 -18 -11 21.3 10.0 2.2 57
IRFR5305 -55 65.0 -28 -18 42.0 19.3 1.4 89
IRFR9024NCPBF -55 175.0 -11 -8 12.7 6.7 3.3 38
IRLR9343 -55 170.0 105.0 -20 -14 31.0 8.5 1.9 79

D2Pak (SMD – 220, TO – 263AB)
Òèï VBRDSS (V) RDS(on) Max 2.7V (mOhms) RDS(on) Max 4.5V (mOhms) RDS(on) Max 10V (mOhms) ID @ TC = 25C (A) ID @ TC = 100C (A) Qg Typ (nC) Qgd Typ (nC) Rth(JC) (K/W) Power Dissipation @ TC = 25C (W)
IRF6218S -150 150.0 -27 -19 21.0 32.0 0.61 250
IRF6215S -150 290.0 -13 -9 44.0 23.3 1.4 110
IRF9520NS -100 480.0 -6.8 -4.8 18.0 10.0 3.1 3.8
IRF9530NS -100 200.0 -14 -10 38.7 21.3 1.9 3.8
IRF9540NS -100 117.0 -23 -16 64.7 34.0 1.1 3.8
IRF5210S -100 60.0 -.40 -0.29 120.0 64.7 0.75 3.8

NEXFET Power MOSFETs (Ñèëîâûå ÌÎÏ - òðàíçèñòîðû)
D2Pak (SMD – 220, TO – 263AB)
Ð-êàíàëüíûå
Òèï VBRDSS (V) RDS(on) Max 2.7V (mOhms) RDS(on) Max 4.5V (mOhms) RDS(on) Max 10V (mOhms) ID @ TC = 25C (A) ID @ TC = 100C (A) Qg Typ (nC) Qgd Typ (nC) Rth(JC) (K/W) Power Dissipation @ TC = 25C (W)
IRF4905S -55 20.0 -74 -52 120.0 57.3 0.75 200
IRF5305S -55 60.0 -31 -22 42.0 19.3 1.4 110
IRF9Z34NS -55 100.0 19 14 23.3 10.7 2.2 68
IRF9Z24NS -55 175.0 -12 -8.5 12.7 6.7 3.3 45
IRL5602S -20 62.0 42.0 24 -17 29.3 12.7 2.0 75

I-Pak (ÒÎ – 251ÀÀ)
Òèï VBRDSS (V) RDS(on) Max 4.5V (mOhms) RDS(on) Max 10V (mOhms) ID @ TC = 25C (A) ID @ TC = 100C (A) Qg Typ (nC) Qgd Typ (nC) Rth(JC) (K/W) Power Dissipation @ TC = 25C (W)
IRFU6215 -150 580.0 -13 -9 44.0 23.3 1.4 110
IRFU9120N -100 480.0 -6.5 -4.1 18.0 10.0 3.2 39
IRFU5410 -100 205.0 -13 -8.2 38.7 21.3 1.9 66
IRFU9024N -55 175.0 -11 -8 12.7 6.7 3.3 38
IRFU9024NCPBF -55 175.0 -11 -8 12.7 6.7 3.3 38
IRFU5305 -55 65.0 -28 -18 42.0 19.3 1.4 89
IRFU5505 -55 110.0 -18 -11 21.3 10.0 2.2 57
IRLU9343 -55 170.0 105.0 -20 -14 31.0 8.5 1.9 79

Micro 3/ SOT-23
Òèï VBRDSS (V) RDS(on) 1.8V (mOhms) RDS(on) 2.5V (mOhms) RDS(on) Max 2.7V (mOhms) RDS(on) Max 4.5V (mOhms) RDS(on) Max 10V (mOhms) ID @ TC = 25C (A) ID @ TA = 25C (A) ID @ TA = 70C (A) Qg Typ (nC) Qgd Typ (nC) Rth(JC) (K/W) Power Dissipation @ TA = 25C (W)
IRLML5203 -30 165.0 98.0 -3.0 -3.0 -2.4 9.5 1.6 100 (JA) 1.25

NEXFET Power MOSFETs (Ñèëîâûå ÌÎÏ - òðàíçèñòîðû)
Micro 3/ SOT-23
Ð-êàíàëüíûå
Òèï VBRDSS (V) RDS(on) 1.8V (mOhms) RDS(on) 2.5V (mOhms) RDS(on) Max 2.7V (mOhms) RDS(on) Max 4.5V (mOhms) RDS(on) Max 10V (mOhms) ID @ TC = 25C (A) ID @ TA = 25C (A) ID @ TA = 70C (A) Qg Typ (nC) Qgd Typ (nC) Rth(JC) (K/W) Power Dissipation @ TA = 25C (W)
IRLML5103 -30 1000.0 600.0 -0.61 -4.8 3.4 1.1 230 (JA) 0.54
IRLML6402 -20 135.0 65.0 -3.7 -2.2 8.0 2.8 100 (JA) 1.30
IRLML6302 -20 900.0 600.0 -0.62 -4.8 2.4 1.0 230 (JA) 0.54
IRLML6401 -12 125.0 85.0 50.0 -4.3 -3.4 10.0 2.6 100 (JA) 1.30

Micro 8
Òèï VBRDSS (V) RDS(on) Max 2.7V (mOhms) RDS(on) Max 4.5V (mOhms) RDS(on) Max 10V (mOhms) ID @ TA = 25C (A) ID @ TA = 70C (A) Qg Typ (nC) Qgd Typ (nC) Rth(JC) (K/W) Power Dissipation @ TA = 25C (W)
IRF7606 -30 150.0 90.0 -3.6 -2.9 20.0 7.6 70 (JA) 1.80
IRF7726 -30 40.0 26.0 -7.0 -5.7 46.0 8.1 70 (JA) 1.79
IRF7604 -20 130.0 90.0 -3.6 -2.9 13.0 5.6 70 (JA) 1.80
IRF7663 -20 40.0 20.0 -8.2 -6.6 30.0 7.0 70 (JA) 1.80

SO-8
Òèï VBRDSS (V) RDS(on) 1.8V (mOhms) RDS(on) 2.5V (mOhms) RDS(on) Max 2.7V (mOhms) RDS(on) Max 4.5V (mOhms) RDS(on) Max 10V (mOhms) ID @ TA = 25C (A) ID @ TA = 70C (A) Qg Typ (nC) Qgd Typ (nC) Rth(JC) (K/W) Power Dissipation @ TA = 25C (W)
IRF6216 -150 240.0 -2.2 -1.9 33.0 15.0 20 2.50
IRF6217 -150 2400.0 -0.70 -2.4 6.0 2.8 20 2.50
IRF7241 -40 70.0 41.0 -6.2 -4.9 53.0 3.9 50 (JA) 2.50
IRF7240 -40 25.0 15.0 -10.5 -8.6 73.0 17.0 50 (JA) 2.50
IRF7406 -30 70.0 45.0 -5.8 -3.7 39.3 14.0 50 (JA) 2.50

NEXFET Power MOSFETs (Ñèëîâûå ÌÎÏ - òðàíçèñòîðû)
SO-8
Ð-êàíàëüíûå
Òèï VBRDSS (V) RDS(on) 1.8V (mOhms) RDS(on) 2.5V (mOhms) RDS(on) Max 2.7V (mOhms) RDS(on) Max 4.5V (mOhms) RDS(on) Max 10V (mOhms) ID @ TA = 25C (A) ID @ TA = 70C (A) Qg Typ (nC) Qgd Typ (nC) Rth(JC) (K/W) Power Dissipation @ TA = 25C (W)
IRF7205 -30 130.0 70.0 -4.6 -3.7 27.0 7.5 50 (JA) 2.50
SI4435DY -30 35.0 20.0 -8.0 -6.4 40.0 8.0 50 (JA) 2.50
IRF7416 -30 35.0 20.0 -10.0 -7.1 61.0 22.0 50 (JA) 2.50
IRF7424 -30 22.0 13.5 -11.0 -9.3 75.0 12.0 50 (JA) 2.50
IRF7416QPBF -30 35.0 20.0 -10.0 -7.1 61.0 22.0 50 (JA) 2.50
IRF7204 -20 100.0 60.0 -5.3 -4.2 25.0 8.0 50 (JA) 2.50
IRF7404QPBF -20 60.0 40.0 -6.7 -7.7 32.7 14.0 50 (JA) 2.50
IRF7404 -20 60.0 40.0 -6.7 -5.4 33.3 14.0 50 (JA) 2.50
IRF7425 -20 13.0 8.2 -15.0 -12 87.0 21.0 50 (JA) 2.50
IRF7207 -20 100.0 60.0 -5.4 -4.3 15.0 5.7 50 (JA) 2.50
IRF7410 -12 13.0 9.0 7.0 -16.0 -13 91.0 25.0 50 (JA) 2.50
IRF7220 -12 20.0 12.0 -11.0 -8.8 84.0 37.0 50 (JA) 2.50
IRF7420 -12 26.0 17.5 14.0 -11.5 -9 38.0 8.7 50 (JA) 2.50
IRF7210 -12 10.0 7.0 -16.0 -12 212.0 52.0 50 (JA) 2.50
IRF7433 -12 46.0 30.0 24.0 -8.9 -7.1 20.0 4.0 50 (JA) 2.50
IRF7233 -12 33.0 20.0 -9.5 -6 49.0 22.0 50 (JA) 2.50

TO-220 FullPak (Iso)
Òèï VBRDSS (V) RDS(on) Max 4.5V (mOhms) RDS(on) Max 10V (mOhms) ID @ TC = 25C (A) ID @ TC = 100C (A) Qg Typ (nC) Qgd Typ (nC) Rth(JC) (K/W) Power Dissipation @ TC = 25C (W)
IRLIB9343 -55 170.0 105.0 -14 -10 31.0 8.5 3.84 33

NEXFET Power MOSFETs (Ñèëîâûå ÌÎÏ - òðàíçèñòîðû)
ÒÎ-220ÀÂ
Ð-êàíàëüíûå
Òèï VBRDSS (V) RDS(on) Max 10V (mOhms) ID @ TC = 25C (A) ID @ TC = 100C (A) Qg Typ (nC) Qgd Typ (nC) Rth(JC) (K/W) Power Dissipation @ TC = 25C (W)
IRF6215 -150 290.0 -13 -9 44.0 23.3 1.4 110
IRF6218 -150 150.0 -27 -19 21.0 32.0 0.61 250
IRF9540N -100 117.0 -23 -16 64.7 34.0 1.1 140
IRF9530N -100 200.0 -14 -10 38.7 21.3 1.9 79
IRF5210 -100 60.0 -40 -29 120.0 64.7 0.75 200
IRF9520N -100 480.0 -6.8 -4.8 18.0 10.0 3.1 48
IRF4905 -55 20.0 -74 -52 120.0 57.3 0.75 200
IRF9Z34N -55 100.0 -17 -12 23.3 10.7 2.7 56
IRF5305 -55 60.0 -31 -22 42.0 19.3 1.4 110
IRF9Z24N -55 175.0 -12 -8.5 12.7 6.7 3.3 45

TO-247AC
Òèï VBRDSS (V) RDS(on) Max 10V (mOhms) ID @ TC = 25C (A) ID @ TC = 100C (A) Qg Typ (nC) Qgd Typ (nC) Rth(JC) (K/W) Power Dissipation @ TC = 25C (W)
IRFP9140N -100 117.0 -21 -15 64.7 34.0 1.3 120

TO-262
Òèï VBRDSS (V) RDS(on) Max 10V (mOhms) ID @ TC = 25C (A) ID @ TC = 100C (A) Qg Typ (nC) Qgd Typ (nC) Rth(JC) (K/W) Power Dissipation @ TC = 25C (W)
IRF6215L -150 290.0 -13 -9 44.0 23.3 1.4 110
IRF9540NL -100 117.0 -23 -16 64.7 34.0 1.1 140
IRF9530NL -100 200.0 -14 -10 38.7 21.3 1.9 79
IRF9520NL -100 480.0 -6.8 -4.8 18.0 10.0 3.1 48
IRF5210L -100 60.0 -.40 -0.29 120.0 64.7 0.75 200
IRF9Z24NL -60 175.0 -11 -7.7 12.7 6.7 2.5 60

NEXFET Power MOSFETs (Ñèëîâûå ÌÎÏ - òðàíçèñòîðû)
TO-262
Ð-êàíàëüíûå
Òèï VBRDSS (V) RDS(on) Max 10V (mOhms) ID @ TC = 25C (A) ID @ TC = 100C (A) Qg Typ (nC) Qgd Typ (nC) Rth(JC) (K/W) Power Dissipation @ TC = 25C (W)
IRF9Z34NL -55 100.0 -19 -14 23.3 10.7 2.2 68
IRF5305L -55 60.0 -31 -22 42.0 19.3 1.4 110
IRF4905L -55 20.0 -74 -52 120.0 57.3 0.75 200

TSOP-6 (Micro 6)
Òèï VBRDSS (V) RDS(on) Max 2.7V (mOhms) RDS(on) Max 4.5V (mOhms) RDS(on) Max 10V (mOhms) ID @ TC = 25C (A) ID @ TA = 25C (A) ID @ TA = 70C (A) Qg Typ (nC) Qgd Typ (nC) Rth(JC) (K/W) Power Dissipation @ TC = 25C (W) Power Dissipation @ TA = 25C (W)
IRF5803 -40 190.0 112.0 -3.4 -2.7 25.0 3.5 62.5 (JA) 1.30
IRLMS5703 -30 400.0 200.0 -2.3 -1.9 7.2 2.3 75 (JA) 1.70
IRF5805 -30 165.0 98.0 -3.8 -3 11.0 1.5 62.5 (JA) 2.00
IRF5800 -30 150.0 85.0 -4.0 -4.0 -3.2 11.4 2.2 62.5 (JA) 2.0 2.00
IRLMS6802 -20 100.0 50.0 -5.6 -4.5 11.0 2.9 62.5 (JA) 2.0 2.00
SI3443DV -20 90.0 65.0 -4.4 -3.5 11.0 2.9 62.5 (JA) 2.0 2.00
IRF5806 -20 147.0 86.0 -4.0 -4.0 -3.3 8.3 2.6 62.5 (JA) 2.0 2.00
IRLMS6702 -20 375.0 200.0 -2.3 -1.9 5.8 2.1 75 (JA) 1.70

TSSOP-8
Òèï VBRDSS (V) RDS(on) 1.8V (mOhms) RDS(on) 2.5V (mOhms) RDS(on) Max 2.7V (mOhms) RDS(on) Max 4.5V (mOhms) RDS(on) Max 10V (mOhms) ID @ TA = 25C (A) ID @ TA = 70C (A) Qg Typ (nC) Qgd Typ (nC) Rth(JC) (K/W) Power Dissipation @ TA = 25C (W)
IRF7704GPBF -40 74.0 46.0 -4.6 -3.7 25.0 9.5 83 (JA) 1.50
IRF7703 -40 45.0 28.0 -6.0 -4.7 41.0 16.0 83 1.50
IRF7703GPBF -40 45.0 28.0 -6.0 -4.7 41.0 16.0 83 (JA) 1.50

NEXFET Power MOSFETs (Ñèëîâûå ÌÎÏ - òðàíçèñòîðû)
TSSOP-8
Ð-êàíàëüíûå
Òèï VBRDSS (V) RDS(on) 1.8V (mOhms) RDS(on) 2.5V (mOhms) RDS(on) Max 2.7V (mOhms) RDS(on) Max 4.5V (mOhms) RDS(on) Max 10V (mOhms) ID @ TA = 25C (A) ID @ TA = 70C (A) Qg Typ (nC) Qgd Typ (nC) Rth(JC) (K/W) Power Dissipation @ TA = 25C (W)
IRF7704 -40 74.0 46.0 -4.6 -3.7 25.0 9.5 83 1.50
IRF7705GPBF -30 30.0 18.0 -8.0 -6 58.0 9.0 83 (JA) 1.50
IRF7706GPBF -30 36.0 22.0 -7.0 -5.7 48.0 8.4 83 (JA) 1.51
IRF7706 -30 36.0 22.0 -7.0 -5.7 48.0 8.4 83 1.51
IRF7705 -30 30.0 18.0 -8.0 -6 58.0 9.0 83 1.50
IRF7700GPBF -20 24.0 15.0 -8.6 -6.8 59.0 19.0 83 (JA) 1.50
IRF7707 -20 18.9 14.3 -7.0 -5.7 31.0 10.0 83 1.50
IRF7701GPBF -12 22.0 15.0 11.0 -10.0 -8 69.0 21.0 83 (JA) 1.50
IRF7702 -12 27.0 19.0 14.0 -8.0 -7 54.0 15.0 83 1.50
IRF7702GPBF -12 27.0 19.0 14.0 -8.0 -7 54.0 15.0 83 (JA) 1.50

Y-PAK (TO-257AB)
Òèï VBRDSS (V) RDS(on) Max 10V (mOhms) ID @ TC = 25C (A) Qg Typ (nC) Qgd Typ (nC)
IRFY9240 -200 510.0 -7.7 40.0 25.3
IRFY9120 -100 -5.3

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