Двойные N-канальные MOS транзисторы International Rectifier

HEXFET Power MOSFETs
Micro 8
Dual N-Channel
Тип |BVDSS| RDS(on) 2.7V N-Channnel (mOhms) RDS(on) 4.5V N-Channnel (mOhms) RDS(on) 10V N-Channnel (mOhms) ID @ TA = 25C N-Channel (A) ID @ TA = 70C N-Channel (A) Qg Typ N-Channel (nC) Qgd Typ N-Channel (nC) Rth(JA) (K/W) Power Dissipation (W)
IRF7501 20 200.0 135.0 2.4 1.9 5.3 2.2 100 1.2
IRF7503 30 222.0 135.0 2.4 1.9 7.8 2.5 100 1.25
IRF7530 20 45.0 30.0 5.4 4.3 18.0 3.4 100 1.3

SO-8
Тип |BVDSS| RDS(on) 2.7V N-Channnel (mOhms) RDS(on) 4.5V N-Channnel (mOhms) RDS(on) 10V N-Channnel (mOhms) ID @ TA = 25C N-Channel (A) ID @ TA = 70C N-Channel (A) Qg Typ N-Channel (nC) Qgd Typ N-Channel (nC) Rth(JA) (K/W) Power Dissipation (W)
IRF7910 12 50.0 15.0 10 7.9 17.0 5.2 62.5 2.0
IRF7101 20 150.0 100.0 3.5 2.3 10.0 2.4 62.5 2.0
IRF7301 20 70.0 50.0 5.2 4.1 13.3 5.3 62.5 2.0
IRF7311 20 46.0 29.0 6.6 5.3 18.0 6.2 62.5 2.0
IRF7331 20 45.0 30.0 7.0 5.5 13.0 2.1 62.5 2.0
IRF8910 20 18.3 13.4 10 8.3 7.4 2.5 62.5 2.0
IRF8915 20 27.0 18.3 8.9 7.1 4.9 1.7 62.5 2.0
IRF9910 20 18.3 13.4 10 8.3 62.5 2.0
IRF7303 30 80.0 50.0 4.9 3.9 16.7 5.3 62.5 2.0
IRF7303Q 30 80.0 50.0 4.9 3.9 16.7 5.3 62.5 2.0
IRF7313 30 46.0 29.0 6.5 5.2 22.0 6.4 62.5 2.0
IRF7313QPBF 30 46.0 29.0 6.5 5.2 22.0 6.4 62.5(JA) 2.0
IRF7901D1 30 32.0 1.9 62.5 2.0
IRF7902PBF 30 29.7 (Q1) 22.6 (Q1) 9.7 (Q2) 7.8 (Q2) 4.6 (Q1) 2.3 (Q2) 62.5 2.0 (Q2)
IRF7904PBF 30 20.5 (Q1) 16.2 (Q1) 7.6 (Q1) 8.9 (Q2) 14.0 (Q2) 4.8 (Q2) 62.5 1.4 (Q1)
IRF7905PBF 30 21.3 (Q2) 21.8 (Q1) 8.9 (Q2) 6.2 (Q1) 6.9 (Q2) 1.7 (Q1) 62.5 2.0 (Q2)

HEXFET Power MOSFETs
SO-8
Dual N-Channel
Тип |BVDSS| RDS(on) 2.7V N-Channnel (mOhms) RDS(on) 4.5V N-Channnel (mOhms) RDS(on) 10V N-Channnel (mOhms) ID @ TA = 25C N-Channel (A) ID @ TA = 70C N-Channel (A) Qg Typ N-Channel (nC) Qgd Typ N-Channel (nC) Rth(JA) (K/W) Power Dissipation (W)
IRF7907PBF 30 20.5 (Q1) 16.4 (Q1) 11.0 (Q2) 7.3 (Q1) 14.0 (Q2) 4.9 (Q2) 62.5 2.0 (Q1)
IRF9956 30 200.0 100.0 3.5 2.8 6.9 1.8 62.5 2.0
IRF7103 50 200.0 130.0 3.0 2.3 12.0 3.5 62.5 2.0
IRF7103Q 50 200.0 130.0 3.0 2.5 10.0 2.8 50 2.4
IRF7103IPBF 50 200.0 130.0 3.0 2.3 12.0 3.5 62.5 2.0
IRF7341 55 65.0 50.0 4.7 3.8 24.0 7.0 62.5 2.0
IRF7341Q 55 65.0 50.0 5.1 4.2 29.0 7.3 62.5 2.4
IRF7341IPBF 55 65.0 50.0 4.7 3.8 24.0 7.0 62.5 2.0
IRF7380 80 73.0 3.6 2.8 15.0 4.5 50 2.0
IRF7380QPBF 80 73.0 3.6 2.9 15.0 4.5 50 2.0

TO-220 Full-Pak 5-Pin
Тип |BVDSS| RDS(on) 10V N-Channnel (mOhms) ID @ TA = 25C N-Channel (A) Qg Typ N-Channel (nC) Qgd Typ N-Channel (nC) Rth(JA) (K/W) Power Dissipation (W)
IRFI4024H-117P 55 60.0 11 8.9 3.5 65 14
IRFI4212H-117P 100 72.5 11 12.0 6.2 65 18
IRFI4020H-117P 200 100.0 9.1 19.0 5.8 65 21
IRFI4019H-117P 150 95.0 8.7 13.0 3.9 65 18

HEXFET Power MOSFETs
TSOP-6
Dual N-Channel
Тип |BVDSS| RDS(on) 2.7V N-Channnel (mOhms) RDS(on) 4.5V N-Channnel (mOhms) ID @ TA = 25C N-Channel (A) ID @ TA = 70C N-Channel (A) Qg Typ N-Channel (nC) Qgd Typ N-Channel (nC) Rth(JA) (K/W) Power Dissipation (W)
IRF5852 20 120.0 90.0 2.7 2.2 4 0.88 130 0.96

TSSOP-8
Тип |BVDSS| RDS(on) 4.5V N-Channnel (mOhms) RDS(on) 10V N-Channnel (mOhms) ID @ TA = 25C N-Channel (A) ID @ TA = 70C N-Channel (A) Qg Typ N-Channel (nC) Qgd Typ N-Channel (nC) Rth(JA) (K/W) Power Dissipation (W)
IRF7757GPBF 20 35.0 4.8 3.9 15.0 4.8 105 1.2
IRF7752 30 36.0 30.0 4.6 3.7 9.0 2.6 125 1.0
IRF7752GPBF 30 36.0 30.0 4.6 3.7 9.0 2.6 125 1.0


Dual Р-Channel
Micro 8
Тип |BVDSS| RDS(on) 2.7V P-Channnel (mOhms) RDS(on) 4.5V P-Channnel (mOhms) RDS(on) 10V P-Channnel (mOhms) ID @ TA = 25C P-Channel (A) ID @ TA = 70C P-Channel (A) Qg Typ P-Channel (nC) Qgd Typ P-Channel (nC) Rth(JA) (K/W) Power Dissipation (W)
IRF7506 -30 450.0 270.0 -1.7 -1.4 7.5 2.5 100 1.25
IRF7504 -20 400.0 270.0 -1.7 -1.4 5.4 2.4 100 1.25
IRF7555 -20 105.0 55.0 -4.3 -3.4 10.0 2.5 100 1.25

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