Силовой HEXFET МОП - транзистор International Rectifier и диод Шоттки в одном корпусе
| Силовой HEXFET МОП - транзистор и диод Шоттки в одном корпусе DirectFET MT N-канальный |
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|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Тип | VBRDSS (V) | RDS(on) Max 4.5V (mOhms) | RDS(on) Max 10V (mOhms) | ID @ TA = 25C (A) | ID @ TA = 70C (A) | Qg Typ (nC) | Qgd Typ (nC) | Rth(JC) (K/W) | Power Dissipation @ TC = 25C (W) | Power Dissipation @ TA = 25C (W) | Schottky VF (V) | @ IF |
| IRF6691 | 20 | 2.5 | 1.8 | 32.0 | 26 | 47.0 | 15.0 | 1.4 | 2.0 | 2.00 | 0.65 | 25.0 |
| Micro 8 | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Тип | VBRDSS (V) | RDS(on) Max 2.7V (mOhms) | RDS(on) Max 4.5V (mOhms) | RDS(on) Max 10V (mOhms) | ID @ TA = 25C (A) | ID @ TA = 70C (A) | Qg Typ (nC) | Qgd Typ (nC) | Rth(JC) (K/W) | Power Dissipation @ TA = 25C (W) | Schottky VF (V) | @ IF |
| IRF7521D1 | 20 | 200.0 | 135.0 | 2.4 | 1.9 | 5.3 | 2.2 | 100 (JA) | 1.25 | 0.50 | 1.0 | |
| IRF7523D1 | 30 | 190.0 | 130.0 | 2.7 | 2.1 | 7.8 | 2.5 | 100 (JA) | 0.80 | 0.50 | 1.0 | |
| SO-8 | |||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Тип | VBRDSS (V) | RDS(on) Max 2.7V (mOhms) | RDS(on) Max 4.5V (mOhms) | RDS(on) Max 10V (mOhms) | ID @ TA = 25C (A) | ID @ TA = 70C (A) | Qg Typ (nC) | Qgd Typ (nC) | Rth(JC) (K/W) | Power Dissipation @ TC = 25C (W) | Power Dissipation @ TA = 25C (W) | Schottky VF (V) | @ IF |
| IRF7807D1 | 30 | 25.0 | 8.3 | 6.6 | 2.9 | 50 (JA) | 2.50 | 0.50 | 1.0 | ||||
| IRF7807D2 | 30 | 25.0 | 8.3 | 6.6 | 2.9 | 50 (JA) | 2.50 | 0.57 | 3.0 | ||||
| IRF7807VD2 | 30 | 25.0 | 8.3 | 6.6 | 9.5 | 2.4 | 50 (JA) | 2.50 | 0.54 | 3.0 | |||
| IRF7353D2 | 30 | 46.0 | 29.0 | 6.5 | 5.2 | 22.0 | 6.4 | 62.5 (JA) | 2.0 | 2.00 | 0.57 | 3.0 | |
| IRF7807VD1 | 30 | 25.0 | 8.3 | 6.6 | 9.5 | 2.4 | 50 (JA) | 2.50 | 0.5 | 1.0 | |||
| IRF7353D1 | 30 | 46.0 | 32.0 | 6.5 | 5.2 | 22.0 | 6.4 | 62.5 (JA) | 2.0 | 2.00 | 0.50 | 1.0 | |
| IRF7421D1 | 30 | 60.0 | 35.0 | 5.8 | 4.6 | 18.0 | 5.9 | 62.5 (JA) | 2.0 | 2.00 | 0.50 | 1.0 | |
| Силовой HEXFET МОП-транзистор и диод Шоттки в одном корпусе Micro 8 P-канальный |
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Тип | VBRDSS (V) | RDS(on) Max 2.7V (mOhms) | RDS(on) Max 4.5V (mOhms) | RDS(on) Max 10V (mOhms) | ID @ TA = 25C (A) | ID @ TA = 70C (A) | Qg Typ (nC) | Qgd Typ (nC) | Rth(JC) (K/W) | Power Dissipation @ TA = 25C (W) | Schottky VF (V) | @ IF |
| IRF7526D1 | -30 | 400.0 | 200.0 | -2.0 | -1.6 | 7.5 | 2.5 | 100 (JA) | 0.80 | 0.50 | 1.0 | |
| IRF7534D1 | -20 | 55.0 | -4.3 | -3.4 | 10.0 | 2.5 | 100 (JA) | 1.25 | 0.50 | 1.0 | ||
| IRF7524D1GPBF | -20 | 400.0 | 270.0 | -1.7 | -1.4 | 5.4 | 2.4 | 100 (JA) | 1.25 | 0.50 | 1.0 | |
| IRF7524D1 | -20 | 400.0 | 270.0 | -1.7 | -1.4 | 5.4 | 2.4 | 100 (JA) | 1.25 | 0.50 | 1.0 | |
| SO-8 | |||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Тип | VBRDSS (V) | RDS(on) Max 2.7V (mOhms) | RDS(on) Max 4.5V (mOhms) | RDS(on) Max 10V (mOhms) | ID @ TA = 25C (A) | ID @ TA = 70C (A) | Qg Typ (nC) | Qgd Typ (nC) | Rth(JC) (K/W) | Power Dissipation @ TC = 25C (W) | Power Dissipation @ TA = 25C (W) | Schottky VF (V) | @ IF |
| IRF7342D2 | -55 | 170.0 | 105.0 | -3.4 | -2.7 | 26.0 | 8.4 | 62.5 (JA) | 2.0 | 2.00 | 0.61 | 3.0 | |
| IRF5803D2 | -40 | 190.0 | 112.0 | -3.4 | -2.7 | 25.0 | 3.5 | 62.5 (JA) | 2.0 | 2.00 | 0.51 | 5.0 | |
| IRF7326D2 | -30 | 160.0 | 100.0 | -3.6 | -2.9 | 16.7 | 6.0 | 62.5 (JA) | 2.0 | 2.00 | 0.57 | 3.0 | |
| IRF7321D2 | -30 | 98.0 | 62.0 | -4.9 | -3.8 | 23.0 | 5.9 | 62.5 (JA) | 2.0 | 2.00 | 0.57 | 3.0 | |
| IRF7322D1 | -20 | 98.0 | 62.0 | -5.3 | -4.3 | 19.0 | 7.7 | 62.5 (JA) | 2.0 | 2.00 | 0.50 | 1.0 | |
| IRF7324D1 | -20 | 400.0 | 270.0 | -2.2 | -1.8 | 5.2 | 2.5 | 62.5 (JA) | 2.0 | 2.00 | 0.50 | 1.0 | |
| IRF7422D2 | -20 | 140.0 | 90.0 | -4.3 | -3.4 | 15.0 | 6.0 | 62.5 (JA) | 2.0 | 2.00 | 0.57 | 3.0 | |
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